You can also read my PhD Thesis online.

Legend:

• Online: click to read the paper online in iPaper format.
• BibTex: click to obtain the Bibtex file of the bibliography information.
• (last column): click to access the paper in the publisher site, such as IEEE, IOP, AIP, etc.
  

Journals

1. O. Kurniawan and V. K. S. Ong, "Charge Collection from Within a Collecting Junction Well," IEEE Transactions on Electron Devices, vol. 55, no. 5, pp. 1220, 2008. (Online , BibTeX , IEEE) Copyright 2006 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
2. P. Bai, E. Li, K. T. Lam, O. Kurniawan, W. S. Koh, "Carbon nanotube Schottky diode: an atomic perspective," Nanotechnology, vol. 19, pp. 115203, 2008. (Online , BibTeX, IOP) Any use or publication of the material by the Authors or by authorised third parties shall acknowledge the copyright of the Publisher in an appropriate manner which shall include the legend Nanotechnology © [2008] IOP Publishing Ltd.
   
3. O. Kurniawan and V. K. S. Ong, "Investigation of Range-Energy Relationships for Low Energy Electron Beams in Silicon and Gallium Nitride," Scanning, vol. 29, no. 6, pp. 280-286, 2007. Please email me if you wish to obtain the electronic copy of the paper.
   
4. G. Moldovan, P. Kazemian, P. R. Edwards, V .K. S. Ong, O. Kurniawan, C. J. Humphreys, ”Low-voltage cross-sectional EBIC for characterisation of GaN-based light emitting devices,” Ultramicroscopy, vol. 107, no. 4-5, pp. 382-389, 2007.
5. V. K. S. Ong, O. Kurniawan, G. Moldovan, C. J. Humphreys, ”A method of accurately determining the position of the edges of depletion regions in semiconductor junctions,” Journal of Applied Physics, vol. 100, pp. 114501, 2006. (Online, BibTeX , AIP) Copyright (2006) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. 
6. O. Kurniawan and V. K. S. Ong, ”Determination of diffusion lengths with the use of EBIC from a diffused junction with any values of junction depths,” IEEE Transactions on Electron Devices, vol. 53, no. 9, pp. 2358-2363, 2006. (Online , BibTeX , IEEE) Copyright 2006 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
   
7. O. Kurniawan and V. K. S. Ong, ”An analysis of the factors affecting the alpha parameter used for extracting surface recombination velocity in EBIC measurements,” Solid-State Electronics, vol. 50, no. 3, pp. 345-354, 2006.

 Conferences

1. G. Moldovan, V. K. S. Ong, O. Kurniawan, P. Kazemian, P. R. Edwards, and C. J. Humphreys, ”EBIC characterisation of diffusion and recombination of minority carriers in GaN-based LEDs”, Proceedings of Microscopy of Semiconducting Materials XV, 2-5 April 2007, University of Cambridge, UK.
2. O. Kurniawan and V. K. S. Ong, ”Generalized EBIC method for extracting diffusion lengths from non-conventional collector structures,” Proceedings of Conference on Optoelectronic and Microelectronic Materials and Devices, 6th to 8th December 2006, The University of Western Australia, Perth, Western Australia.
3. O. Kurniawan and V. K. S. Ong, ”Analysis of range-energy relationships for low energy electron beam interaction in GaN,” Proceedings of APCOT, 25-28 June 2006, Singapore.
4. G. Moldovan, P. Kazemian, C. J. Humphreys, O. Kurniawan, V. K. S. Ong, and P. Edwards, ”Cross-Sectional EBIC Investigation of Diffusion and Recombination of Minority carriers in InGaN/GaN MQW LEDs,” in Proceedings of the UK Nitride Consortium Meeting, Jan 2006, Glasgow, Scotland.
5. G. Moldovan, V. K. S. Ong, P. Kazemian, O. Kurniawan, E. J. Thrush, C. J. Humphreys, ”Measurement of minority carrier diffusion lengths and surface recombination velocity in GaN  using cross-sectional EBIC,” in Proceedings of the UK Nitride Consortium Meeting, 14th June 2005, Nottingham, UK.
6. V. K. S. Ong and O. Kurniawan, ”An analysis of the alpha parameter used for extracting surface recombination velocity in EBIC measurement,”in Proceedings of Microscopy of Semiconducting Materials XIV, pp. 471-474, 11-14 April 2005, University of Oxford, UK.